DHG 10 C 600PB
advanced
Sonic-FRD
Symbol Definition
R a t i n g s
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Conditions Unittyp. max.
IFSM
IR
A
μA
V
40
IFAV
A
VF
2.20
RthJC
3.15 K/W
VR
=
600
123
min.
5
=10ms (50 Hz), sine
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
VRRM
V
600
10
TVJ
=
V
25
°C
TVJ
=
125
°C
mA
1
Package:
Part number
VR
=
600
TVJ
=
25
°C
IF
=A5
V
TC
= 110 °C
Ptot
40 W
TC
25
°C
=
A
IRM
2
-diF/dt
=
100 A/μs
IF
=A;5
VR
=V400
A
t
rr
EAS
tbd mJ
=A;L = μHtbd 100
TVJ
=
25
°C
IAS
IAR
A
VA
=
1.5·VR
typ.;
tbd
f = 10 kHz
TVJ
150
°C
-55
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
VRRM
=
IFAV
trr
=
=
600
V
5
A
35
ns
TVJ
=45°C
DHG 10 C 600PB
V
tp
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
non-repetitive avalanche energy
repetitive avalanche current
reverse recovery time
2.98
TVJ
=
25
°C
CJ
tbd pF
junction capacitance
VR
=V;300
f = 1 MHz
TVJ
=°C25
VF0
V
1.31
TVJ
= 150 °C
rF
133
TO-220AB
V
2.02
5 125TVJ
=°C
IF
=A
V
2.85
IF
=A10
IF
=A10
ns
35
ns
Industry standard outline
Epoxy meets UL 94V-0
RoHS compliant
TVJ
=25
°C
TVJ
= 125
°C
TVJ
=25
°C
TVJ
= 125
°C
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
IXYS reserves the right to change limits, conditions and dimensions.
? 2006 IXYS all rights reserved
0629
* Data according to IEC 60747and per diode unless otherwise specified
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